
Samsung is gearing up to revolutionize storage technology with its next-generation 400-layer Vertical NAND (V-NAND). The new memory architecture aims to significantly enhance data storage capacity and reliability. This initiative follows Samsung’s recent mass production of its 9th-gen V-NAND, which adopted Quad-Level Cell (QLC) technology to improve performance, capacity, and dependability. The upcoming 10th-gen V-NAND is expected to launch in










